Scaling Issues in Trigate GaN Nanowire Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 100 === This thesis analyzes the scalability of nitride-based nanowire high electron mobility transistors (HEMTs). The positive polarization charge between the AlGaN and GaN interface induces high density of electron which also known as the two dimensional electron gat...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67345808631375742762 |