| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 100 === Due to the good electrical and mechanical properties, graphene has attracted lots of attention since 2004. Such a few atomic layers of graphite is also regarded as the replacement of indium tin oxide (ITO), which is commonly used in the optoelectronic industry in recent years.
In this thesis, mechanisms of graphene growth on different metal templates are studied. For graphene grown on Ni template, the difference of hydrogen injection and cooling speed shows that with hydrogen during growth, better solubility of carbon atoms in the Ni template is observed. And faster cooling speed helps carbon atoms precipitate to the Ni template surface. Therefore, high quality graphene can be obtained. The underneath graphene between Ni and SiO2 substrate is also obtained. At higher growth temperature, more space between Ni and SiO2 resulted in better quality of graphene. For graphene grown on Cu template, low substrate temperature graphene is obtained by using the molecular beam epitaxy (MBE) system to supply the carbon source. The consistency between experimental and theoretical results has confirmed the possibility of low-temperature graphene growth by using MBE technique. The focus of this thesis is to achieve direct graphene growth on semiconductor substrates. By using different approaches, graphene films with excellent crystal quality can be obtained with optimized growth conditions.
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