A Study of ZnO Long Wavelength Electroluminescence Devices

• Main Authors: SHIH-MING HEI, 黑士銘
• Other Authors: Chung-Cheng Chang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/73597527201537670845

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 100 === This study used Radio Frequency Magnetron Sputtering to deposit a layer of SiO2 membrane in thickness of about 200nm on the Si substrate, and deposited a membrane of ZnO mixed with copper on the SiO2/Si substrate. It then used XRD diffraction instrument, SEM, AFM and Photo-Luminescence to measure and analyze the characteristics for the membranes treated at different annealing temperatures and different copper membrane mixing thicknesses in nitrogen. In the production of element, the membrane of ZnO mixed with copper was used to produce the electroluminescent element, the element composition was ITO/ZnO:Cu/SiO2/Si (P)/Al, and the effect of annealing temperature on the luminous characteristic of element was discussed. The research results indicated that after one-hour high temperature thermal annealing of the membrane of ZnO mixed with copper in nitrogen at 600℃, 700℃, 800℃ and 900℃, the membrane annealed at 900℃ had better crystallinity. We can obtain a rather smaller FWHM at (002), (101) and (111), and the PL spectrum showed the annealing at 800℃ excited the most intensive light. In this experiment, the magnetron sputtering system was used to deposit the membrane of ZnO mixed with copper on the SiO2/Si(P) substrate, to make the electroluminescent element of p-i-n ground. When a proper voltage was applied, the spectrum was used to measure the exciting light intensity, and the light excited by EL element of ZnO mixed with copper was found in the greenish yellow (520nm~620nm). Therefore, the widest peak and the highest intensity were measured in this region, and the light excited by this EL element was mainly of yellow-orange light.