| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 100 === In this study, RF Magnetron Sputtering method was used to deposit ZnO and ZnO:Ga thin film on SiO2/Si(P+)substrate. Under N2 atmosphere, thin film treated with different annealing temperatures will be performed with characteristic measurement and analysis using Photo-Luminescence, XRD diffraction, Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). Meanwhile, electroluminescence device preparation will also be performed.
In the device preparation aspect, we have adopted ZnO and ZnO:Ga thin film to prepare electroluminescence device of heterogeneous p-N junction, and the device composition is ITO/ZnO/SiO2/Si(P+)/Al and ITO/ZnO:Ga/SiO2/Si(P+)/Al. In this thesis, we also investigated the influence of annealing temperature on the light emitting property of the device. It was pointed out in the research result that when ZnO and ZnO:Ga thin film was under N2 atmosphere, after one hour of annealing of four temperatures of 500℃, 700℃, 900℃ and 1000℃, it can be seen that 1000℃ annealing will result in better crystalline, at this moment, smaller FWHM can be obtained in (100), (002), (101) and (102) orientation. In addition, it can be seen from PL spectrum that when 1000℃ is used for the annealing, the light intensity excited is the strongest.
In this experiment, Magnetron Sputtering system was used to deposit ZnO and ZnO:Ga thin film on SiO2/Si(P+) substrate to prepare electroluminescence device of heterogeneous p-n junction. It can be seen from the PL spectrum that ZnO and ZnO:Ga thin film will shift towards visible light section due to the increase of annealing temperature. The main spectrum section of ZnO is 370nm~390nm, as the annealing temperature increases, the spectral section will move towards 440nm~580nm, then through the application of voltage and through the use of electroluminescence spectrum for the measurement of the luminescence light intensity, it was found that for ZnO EL device, the excited light has the broadest peak in the region of 460nm~530nm, hence, the light emitted by this device is mainly in the region of 460nm~530nm. Under room temperature, the emitted light color observed is mainly of blue and white light; however, for ZnO:Ga in the optical excitation spectrum, due to the doping of Ga, at annealing temperatures of 900℃ and 1000℃, we can obviously observe that PL spectrum exists in the 500nm~700nm section. However, for the light excited from ZnO:Ga EL device, it can be seen that the peak is broadest in the yellow orange region (550nm~620nm), hence, the light excited from this device in the room temperature is mainly of yellow orange light.
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