| Summary: | 碩士 === 國立臺灣師範大學 === 化學系 === 100 === Graphene is a 2D-planner material composed of carbon with one-atom-thick. Such properties include excellent electronic transport performance, ultrahigh mechanical strength, a favorable work-function , high conductivity and optical transparency, and low cost fabrication. Recently, many kinds of graphene transfer methods have been developed on the basis of improving the graphene quality and decreasing the defect during the transfer process. In this study, two new transferred processes were developed to improve the transfer quality of CVD graphene on the SiO2/Si and PET substrates.
In the thesis, high quality monolayer graphene was grown on Cu foil as the metal catalyst by using utilized chemical vapor deposition. First new transfer process is integration of the PMMA and Roll-to-roll methods. This process not only maintains the high quality and low resistance of grapheme transferred by PMMA method but also avoid the transfer problem of graphene in the solution by roll-to-roll method. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 400Ω⁄sq, 36cm-1 and 0.62. Second, we utilize a simple physical phenomenon “electrostatic” to transfer CVD graphene without any organic support or contact. By using electrostatic transfer, CVD graphene can be transferred on any substrate with buildup of charges. On the PET substrate, the sheet resistance, fwhm of 2D band and I_G⁄I_2D ratio is about 500Ω⁄sq, 35cm-1 and 0.66. Finally, we expect that these new simple and rapid transferred methods can improve an electronic performance of the monolayer graphene for future optoelectronic applications.
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