| Summary: | 碩士 === 國立臺南大學 === 電機工程學系碩士班 === 100 === CIGS thin film solar cells, has been recognized as one of the most promising absorber materials. For improving the absorber layer characteristics of solar cells, it is essential to followed selenization heat treatment process.
The dissertation mainly uses Copper Indium Gallium Selenium (CIGS) single quaternary alloy target, which can simplify the process control. The power was kept at 100w and substrate temperature was 400 ℃ to deposit on the substrate, absorption precursor layer CIGS by RF-sputtering was obtained. By controlling different selenization heat treatment parameters, p-type and low resistivity CIGS thin film absorption layer can be fabricated. Furthermore, it was observe that the thin film with larger grain size as selenization temperature was 550℃, and the selenization holding temperature time was 30 minutes, crystal structure with better quality. From the Raman spectra signal peak gave an evidence of the formation of the CIGS quaternary compounds, and the energy band gap can be easily reached the above of 1eV.
Therefore, this studies investigated for the enhanced reasons of CIGS thin film absorber layer, and it was expect to provide a better heat selenization method for effective enhancement.
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