Defect Selective Passivation by Silica Nanospheres for GaN LED Application
碩士 === 國立清華大學 === 電子工程研究所 === 100 === Gallium nitrid semiconductors have been a focus of intense research effort because of their importance in light emitting, lasing, high frequency, and high power devices. In this study, we use a defect selective passivation with filling silica nanospheres...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27068041446106093554 |