The Design and Fabrication of High Voltage 4H-SiC Trench Junction Barrier Schottky Diode
碩士 === 國立清華大學 === 電子工程研究所 === 100 === This thesis presents a novel structure of 4H-SiC trench junction barrier schottky diode with floating guard ring edge termination, which has low leakage current and low turn-on voltage. In addition, by incorporating the trench structure in the design, the electr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90148417799163668306 |