Performance study on a GaN-based light emitting diode with quantum wells.

Performance study on a GaN-based light emitting diode with quantum wells.

碩士 === 國立清華大學 === 動力機械工程學系 === 100

Bibliographic Details
Main Author:	辜哲顯
Other Authors:	李雄略
Format:	Others
Language:	zh-TW
Published:	2012
Online Access:	http://ndltd.ncl.edu.tw/handle/02308402208414926025

Similar Items

Improving optical performance of InGaN/GaN multiple quantum wells based light-emitting diodes
by: Sheng-ChiehTsai, et al.
Published: (2017)

Modeling the diode equation with quantum wells for vertical-injection GaN-based light emitting diodes
by: HSU, YUEH, et al.
Published: (2011)

Investigation on the performance of multi-quantum barriers in InGaN/GaN multi-quantum well light-emitting diodes
by: Ming-Zhi Lee, et al.
Published: (2010)

Electroluminescence properties of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
by: Tzung-Shian Yang, et al.
Published: (2009)

Investigation and characterization of nonpolar GaN quantum-well structures and light-emitting diodes
by: Chang, Bao-Yao, et al.
Published: (2010)

Investigation and Multiple Quantum Well Pairs prepared on GaN-Based Light-Emitting Diodes
by: Yeh, Kun-Meng, et al.
Published: (2017)

Improvement of internal quantum efficiency for InGaN/GaN multiple quantum wells based light-emitting diodes
by: Cheng-HsuehLu, et al.
Published: (2014)

Study the Optoelectronic Characteristics of InGaN/GaN Multi-Quantum Well Light Emitting Diode
by: Fu-Tsun Chuang, et al.
Published: (2006)

Optical and Material Studies of InGaN/GaN Quantum Well Light Emitting Diode Wafers
by: Jeng-Hung Chen, et al.
Published: (2005)

Study of Electroluminescence Spectra in InGaN/GaN Multiple-quantum-well Light-emitting Diodes
by: Yi-Ping Wang, et al.
Published: (2008)

Improved optical properties of InGaN/GaN light-emitting diodes with In preflow quantum wells
by: Yu-Jin Liu, et al.
Published: (2010)

Capacitance measurements of an InGaN/GaN multi-quantum-well blue light-emitting diode
by: C. C. Liu, et al.
Published: (2001)

Study on internal quantum efficiency and characteristic of InGaN/GaN multiple quantum well light emitting diode
by: Ke, Chih-Chun, et al.

Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
by: Guan-Bo Lin, et al.
Published: (2013-01-01)

Investigation of P-electrode thickness for GaN-Based Light Emitting Diode
by: Hsian-Yi Chiou, et al.
Published: (101)

Study on optical characteristics and internal quantum efficiency of InGaN/GaN multiple quantum well light emitting diodes
by: Po-Chun Lin, et al.
Published: (2008)

InGaN/GaN quantum-well light-emitting diodes with a reversed piezoelectric polarization field
by: Meng-Jie Lee, et al.
Published: (2013)

Fabrication of GaN-Based Light Emitting Diodes
by: Yi-jung Liu, et al.
Published: (2008)

Process of GaN-based Light-emitting Diode
by: Ming-Sheng Chen, et al.
Published: (2004)

Design of GaN-based Light-Emitted Diode
by: Wei-Yu Yeh, et al.
Published: (2005)

GaN Based Solar Cell and Light Emitting Diode with Hybrid AlGaN/InGaN and GaN/InGaN Multiple Quantum Wells
by: Bing-HungHsieh, et al.
Published: (2015)

The Study on InGaN/GaN Light Emitting Diode External Quantum Efficiency
by: jeng hsin,liou, et al.
Published: (2005)

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
by: Abu Bashar Mohammad Hamidul Islam, et al.
Published: (2018-05-01)

A study of δ doped on multi quantum well of InGaN/GaN Light Emitting Diode(LED)
by: Wei-Cheng Chen, et al.
Published: (2015)

Investigation of GaN-Based Light-Emitting Diodes with Improved Performance
by: Yi-JungLiu, et al.
Published: (2011)

InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes
by: G.F. Yang, et al.
Published: (2016-11-01)

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films
by: Fedor M. Kochetkov, et al.
Published: (2021-06-01)

Investigation of effects of quantum barrier thickness on GaN-based light-emitting diodes
by: Kuan-YuChen, et al.
Published: (2012)

Analyzed the external quantum efficiency of patterned GaN-based light-emitting diodes
by: Jhan-Hong Ye, et al.

Optical properties of ZnO epilayers and InGaN/GaN mulitiple-quantum-well light emitting diodes
by: SHU-WEI WU, et al.
Published: (2008)

The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
by: Jen Hsuan Wang, et al.
Published: (2011)

Numerical Simulation of Optoelectronic Properties of Nonpolar and Semipolar InGaN/GaN Quantum Well Light Emitting Diodes
by: Hung-Hsun Huang, et al.
Published: (2009)

Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells
by: Li-Hong Zhu, et al.
Published: (2013-01-01)

Anelasticity study in GaN Light-emitting Diode
by: Chao-Chi Chung, et al.
Published: (2017)

Investigation of InGaN/GaN multiple-quantum-well blue light emitting diode with InGaN/GaN superlattice current spreading layer
by: An-Bang Wang, et al.
Published: (2005)

Study of Roughened Structures on the Characteristics of GaN-Based Light Emitting Diodes
by: Che-Ming Hsu, et al.

Investigation of Optical Properties of Quasi-quantum Dot Nanostructures in InGaN/GaN Multiple Quantum Well Light Emitting Diodes
by: TA-CHUAN KUO, et al.
Published: (2007)

Optical Analyses of the Emission Efficiencies of the InGaN/GaN Quantum Wells under the Conditions of Different p-GaN Thicknesses in Light-emitting Diodes
by: Kuan-Yu Chen, et al.
Published: (2011)

Investigation of InGaN/GaN Light Emitting Diode
by: Chia-Ming Lee, et al.
Published: (2004)

Investigation of InGaN/GaN Light Emitting Diode
by: Yu-Chuan Liu, et al.
Published: (2004)