Investigation of Switching Mechanisms and Device Measurements from a ZnO Thin Film Resistive Switching Memory

• Main Authors: Huang, Chi-Hsin, 黃棨歆
• Other Authors: Chueh, Yu-Lun
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/52256870639742858633

碩士 === 國立清華大學 === 材料科學工程學系 === 100 === The thesis has successfully presented a method of transformation of the filamentary resistive switching into the homogeneous interface resistive switching in a Pt/ZnO thin films/Pt memory device. Two types of switching behaviors, which exhibit different resistive switching characteristics and memory performances, were investigated. It has been found that the asymmetric distribution of oxygen vacancies plays a critical role of the transformation between filamentary and homogeneous resistive switching. In addition, under the homogeneous resistive switching, multistate memory can be demonstrated by controlling different compliance currents and reset voltages.