Investigation of Switching Mechanisms and Device Measurements from a ZnO Thin Film Resistive Switching Memory
碩士 === 國立清華大學 === 材料科學工程學系 === 100 === The thesis has successfully presented a method of transformation of the filamentary resistive switching into the homogeneous interface resistive switching in a Pt/ZnO thin films/Pt memory device. Two types of switching behaviors, which exhibit different re...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/52256870639742858633 |