| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 100 === The experiment results are divided into two parts. Part one: the photoresist thin film is first sandwiched by two rigid Si substrates. After heating and pressing, those sandwiched specimens are separated by three kinds of approaches to induce periodic cracked ripples on both the substrate surfaces. We compared the physical parameters of those induced surface undulations, like crack pattern, ripple wavelength and amplitude, and relation between each other. The first type of separation is applied a point force at the edge of top Si plate, and the semicircular crack pattern appeared spontaneously. The second one is applyied a uniaxial tensile loading on the sandwiched specimen, and the method can induce 45°(or 135°)-stripe cracks to the edge of photoresist film. The third one is inserted a razor blade into the middle layer of sandwiched specimen (photoresist thin film), to induce fracture, then, the appeared cracked ripples are parallel (or normal) to the inserted direction of the blade.
Part two: we examine the effect of gamma-irradiation at a dose rate 5 kGy/hr on mrI-8030E photoresist and the fracture-induced structure, including film thickness, molecular weight and those geometric parameters of the crack ripple.
Finally, we used the concept of apparent surface traction consisted of surface energy and residual surface stress to explain the formation of the surface morphology. Furthermore, we investigated the difference of apparent surface tractions before and after irradiation.
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