Interface engineering between high-κ dielectrics and III-V high mobility channel materials for passivation enabling the technology beyond Si CMOS
博士 === 國立清華大學 === 材料科學工程學系 === 100 === The High-κ/Metal-Gate plus III-V high mobility channel materials is regarded as a urgent issue for achieving high performance and low power dissipation complementary metal-oxide-semiconductor (CMOS) technology beyond 15 nm node. A combination of electrical, che...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/26050156900427811103 |