Fabrication and characterization of InP Schottky barrierMOSFET with thin TiO2 gate oxide
碩士 === 國立中山大學 === 電機工程學系研究所 === 100 === In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate oxide of InP Schottky barrier MOSFET. First, aluminum oxide (Al2O3) by ALD can be used as improvement in oxide o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61330678165215742273 |