| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 100 === In this thesis, we propose a new structure of GaP/a-Si:H/BulkSi solar cell in which
the additional a-Si:H layer due to the concept of energy bandgap is used to improve the
open-circuit voltage. As the a-Si:H doping concentration is increased, the upward
bandgap bending is expected to be observed; hence, a high open-circuit voltage is
obtained. But in this situation, the upward bandgap bending also hinders the carrier
transport, leading a low short-circuit current density. It is worth noting that the proposed
solar cell can have a high open-circuit voltage of 0.758 V.
In addition, we carefully investigate the characteristics of wide-bandgap gallium
phosphide (GaP) material used for silicon-based solar cells. According to the simulated
results, the absorption of GaP is better than silicon with a wavelength below 450 nm.
Also, the GaP/BulkSi solar cell is shown to have a lower reflectivity value than the
conventional PN_BulkSi solar cell. Hence we can prove that the internal quantum
efficiency and external quantum efficiency are improved accordingly. As a result, the
short-circuit current density is increased about 10 %. In addition, the optimized
parameters of a GaP/BulkSi solar cell are as follows: the short-circuit current density is
21.264 mA/cm2, the open-circuit voltage is 0.624 V, the fill factor is 82.4 %, the
conversion efficiency is 11.236 %, respectively.
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