Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen

• Main Authors: Shi-Ya Hsu, 徐詩雅
• Other Authors: Li-Wei Tu
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/79239266340722962050

碩士 === 國立中山大學 === 物理學系研究所 === 100 === Abstract 　　Biosensor chip has a lot of advantages, such as label-free, ultra-sensitive, highly selective, fast and real-time detection. Fabricating biosensor chip has great benefits for gene-detection, protein-detection, medical diagnosis and development of new medicine. This research will integrate the biomedical, chemistry, and physics, and also combined with biochemical technology and semiconductor technology to produce biosensor chip. 　　We use microelectronic semiconductor process technology to fabricate silicon nanowire field effect transistors (SiNW-FET). The source-drain current versus the voltage curve (Isd-Vsd) shows that the contact pad and the silicon nanowire form ohmic contact. And then we use chemical surface modification technologies to modified biotin on SiNW-FET to detect streptavidin. 　　In addition, we also grow AlGaN/GaN film by MBE, and fabricate nitride–based high electron mobility transistor (HEMT) by microelectronic semiconductor process technology. In this study, we apply HEMT in biosensor for pancreatic cancer marker CA19-9 antigen. And we modify pancreatic cancer marker CA19-9 antibody on the biosensor chip surface to detect pancreatic cancer marker CA19-9 antigen molecule. 　　Most of biomolecules are with weak charges, which can form chemical gating effect and change the conductance of p-type SiNW. And according to the streptavidin microfluidic measurement of biotin-modified SiNW-FET, the detection limit of streptavidin was 10-9 M. And the detection limit of pancreatic cancer marker CA19-9 antigen for N-HEMT biosensor was 150 U/mL.