| Summary: | 碩士 === 國立中山大學 === 光電工程學系研究所 === 100 === In this thesis, with external cavity semiconductor laser, a high lateral resolution thickness measurement is proposed and demonstrated. The approach is typical an intra-cavity measurement of focused cell thickness by wavelength tuning of an external cavity laser diode. In addition, using blue light of 406nm as laser diode, higher lateral resolution is also observed. Using the proposed thickness method, the lateral resolution and longitudinal resolution have been demonstrated with 20μm and 0.15μm, respectively. We also discuss the feasibility of μm scaled lateral resolution through improvement of laser diode, such as M^2~1.
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