The fabrication and characterization of CuInSe2 nanostructure

碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 100 === Recently , anodic aluminum oxide(AAO) template has been widely used to fabrication one-dimensional nanostructure devices. In this thesis, a self-organized and highly densely packed array nanohole is obtained by anodizing aluminum sheet in oxalic acid. There...

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Bibliographic Details
Main Authors: Wen-hsien Li, 李文賢
Other Authors: none
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/76711675591090269686
Description
Summary:碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 100 === Recently , anodic aluminum oxide(AAO) template has been widely used to fabrication one-dimensional nanostructure devices. In this thesis, a self-organized and highly densely packed array nanohole is obtained by anodizing aluminum sheet in oxalic acid. There is always a existed barrier layer between AAO template and aluminum substrate, which block the current flow and electrochemical deposition of metals or semiconductor into pores. In order to thinning the barrier layer, the step-wise reduction of the anodizing potential could be used after two-stage anodizing process. After thinning barrier layer, the next step could be either (1) procedure of pore widening , (2) process of negative potential in KCL electrolyte , or combination of (1) and (2), depends on the time frame set to obtained through hole anodic aluminum oxide film. Several ranges of diameter value of anodic aluminum oxide nanohole could be obtained about 60~75nm、80~100nm and 100~120nm, which anodizing potential are 40V、50V and 60V, respectively. In this thesis, we selected 40V and 50V to be main anodizing potential because the ordered nanohole arrays in 60V was undesired. We controlled the anodic aluminum oxide thickness within 1~2μm, that is, the aspect ratio range of 15~25. The method of direct current (DC) and pulse current electrodeposition (PED) are used to prepare CuInSe2 nanostructure. The duty cycle of PED was between 1~10% and the reduced potential of electrodeposition was between -0.65~-0.75V. After annealing the deposition of CuInSe2 into AAO, the samples were analyzed for the morphology 、stoichiometry ratio and crystal phase by SEM、EDS and XRD.