The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current

碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 100

Bibliographic Details
Main Author:	李永慶
Other Authors:	林立弘
Format:	Others
Language:	zh-TW
Online Access:	http://ndltd.ncl.edu.tw/handle/93077009549771224215

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record_format	oai_dc
spelling	ndltd-TW-100NCYU56140032015-10-13T21:12:54Z http://ndltd.ncl.edu.tw/handle/93077009549771224215 The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current 摻雜矽的砷化鋁鎵/砷化鎵異質結構大電流量子霍爾效應之研究李永慶碩士國立嘉義大學電子物理學系光電暨固態電子研究所 100 林立弘學位論文 ; thesis 0 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立嘉義大學 === 電子物理學系光電暨固態電子研究所 === 100
author2	林立弘
author_facet	林立弘李永慶
author	李永慶
spellingShingle	李永慶 The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
author_sort	李永慶
title	The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
title_short	The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
title_full	The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
title_fullStr	The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
title_full_unstemmed	The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current
title_sort	study of quantum hall effect with doped si in a algaas/gaas structure at increased measurement current
url	http://ndltd.ncl.edu.tw/handle/93077009549771224215
work_keys_str_mv	AT lǐyǒngqìng thestudyofquantumhalleffectwithdopedsiinaalgaasgaasstructureatincreasedmeasurementcurrent AT lǐyǒngqìng cànzáxìdeshēnhuàlǚjiāshēnhuàjiāyìzhìjiégòudàdiànliúliàngzihuòěrxiàoyīngzhīyánjiū AT lǐyǒngqìng studyofquantumhalleffectwithdopedsiinaalgaasgaasstructureatincreasedmeasurementcurrent
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The study of Quantum Hall effect with doped Si in a AlGaAs/GaAs structure at increased measurement current

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