Stydy of ZnS thin films by Chemical Bath Deposition for Cu(In,Ga)Se2 solar cells

碩士 === 國立彰化師範大學 === 機電工程學系 === 100 === In this research were prepared ZnS buffer layer thin films by chemical bath deposition, and used in CIGS solar cells. The research used Hermetic CBD process to improve the open process is vulnerable to humidity caused by the uneven films coated, and compare the...

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Bibliographic Details
Main Authors: Yen-Tai Chao, 趙晏泰
Other Authors: Yi-Cheng Lin
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/03051597159303284665
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Summary:碩士 === 國立彰化師範大學 === 機電工程學系 === 100 === In this research were prepared ZnS buffer layer thin films by chemical bath deposition, and used in CIGS solar cells. The research used Hermetic CBD process to improve the open process is vulnerable to humidity caused by the uneven films coated, and compare the impact of CdS and ZnS on the CIGS solar cell efficiency. In this research using scanning electron microscopy analysis of ZnS surface morphology, analysis component of film by XPS, films structural analysis by X-ray diffraction, and films optical transmittances by spectroscopy (UV-VIS). The results of the research, Hermetic CBD process under different atmospheric humidity prepared ZnS film, the films is not easy to be affected by environmental humidity changes, films at different humidities O measured from the XPS volume percentage of about 26%, while the S/Zn ratio of about 0.82, the surface roughness of about 4.5 nm, and films structure for the zinc blende structure. The Hermetic CBD process zinc sulfate ( ZnSO4 ) 0.1M. thiourea (SC(NH2)2) 0.6 M. hydrazine (N2H4) 10cc. the solution temperature at 80℃ and pH 9.7 deposited at 25 min can prepared better ZnS films, the average optical transmittance in the visible (380 to 800nm) approximately 77%, the optical bandgap of 3.8eV, and used in CIGS solar cells buffer layer, available the photoelectric conversion efficiency of 0.56%.