Intra-chip 10-Gbps Optical interconnect Module Using Polymer Waveguide with Silicon-Base 45˚Micro-Reflector

• Main Authors: Kai Liang, 梁凱
• Other Authors: Mount-Learn Wu
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/81952875736458467497

碩士 === 國立中央大學 === 光電科學研究所 === 100 === In this thesis, we propose an intra-chip 10-Gbps optical interconnect module using a silicon optical bench (SiOB) integrated with polymer waveguides and silicon-based 45˚ micro-reflectors. In the module, a 850-nm vertical-cavity-surface-emitted-laser (VCSEL) array and a photo-detector array are assembled on the proposed SiOB using Ag/In solder bumps. The 10-Gbps data is operated using the transmission lines plated on the SiOB. The laser beam emitting from the VCSEL array is coupled into the polymer waveguide via a silicon 45˚micro-reflector at the input port. At the output port, the laser beam is coupled out SiOB via another silicon 45˚ micro-reflector. 　　In the fabricated polymer waveguide, it propagation loss of -0.353 dB/cm, the bending loss of -0.4325 dB per 45˚micro-reflector are measured. The insertion loss of whole polymer waveguide with an optical length of 0.5 cm in the proposed module is -2.798 dB. It demonstrates that the polymer waveguide with Si-based 45˚reflector in the module is practicable for on-chip applications. 　　In the fabricated module, the measurement of high-frequency characteristic is show as follow. As the VCSEL array is biased at 8 mA, without IC at the module, the clear eye diagram with an eye high of 16 mV, a jitter of 24.77 ps, and the signal-to-noise ratio of 7.29 is demonstrated at the data rate of 10 Gbps. The experiment data verifies the proposed intra-chip module can be operated at 10 Gbps with a low power consumption.