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碩士 === 國立中央大學 === 工業管理研究所碩士在職專班 === 100 === In touch panel manufacturing process, transparent conductive thin film is one of key components to generate electric field configuration by touch movement. To obtain better characteristics of ITO (indium tin oxide) conductive film, which is ultra thin and...

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Bibliographic Details
Main Authors: Liao-Chieh Yuan, 袁廖杰
Other Authors: Chi-Tai Wang
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/77215337183999208591
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Summary:碩士 === 國立中央大學 === 工業管理研究所碩士在職專班 === 100 === In touch panel manufacturing process, transparent conductive thin film is one of key components to generate electric field configuration by touch movement. To obtain better characteristics of ITO (indium tin oxide) conductive film, which is ultra thin and with low resistance value, it is mostly manufactured in in-line high temperature process. However, in this thesis, DC cluster sputtering is used to conduct low temperature deposition of ITO transparent conductive film. Meanwhile, Taguchi method is applied to conduct experiments and with S/N (Signal to Noise) ratio to further probe into the cause and effect, which is influenced ITO resistance value, and study the optimized operating conditions. In this study, fish-bone diagram is used to find out cause and effect, through evaluation process to identify potential factors as control factors in Taguchi method. Furthermore, Minitab software is applied to conduct factor level combinations looking for important factors to ITO resistance value and investigate its relations. The best result of conditions combination will perform in the gas flow and vacuum parameters verification experiments. Moreover, through different heat treatment temperature on the experiments to confirm and learned that the lower the degree of vacuum is the larger influence to film resistance value is, and the higher amount of argon flow in a vacuum will result in higher resistance value significantly. In addition, the resistance value can be greatly reduced with the use of low oxygen concentration in heat treatment process. Finally, it is to improve ITO thin film properties by adjusting sputtering power to meet touch panel requirements of transparent conductive film, which is needed to correspond to film thickness 200A, resistance value less than 150Ω/□.