| Summary: | 碩士 === 國立交通大學 === 光電科技學程 === 100 === Along with the continuous advancement of integrated to the nanometer level, use the laser source for exposure is more and more popular to instead of the traditional bulb. We can get the benefit of the integrated line width improve to nanometer level, but the cost and maintenance of the laser machine becomes increasing complex. The frequency of repair and maintenance to increase, it also decreases the efficiency of the manpower.
The paper is study the ASML DUV 248 scanner suffered lens A/B seriously destroy event. And this event was getting worse and worse. It caused the wafer level intensity trended down seriously. As we known, the wafer level intensity affects the throughput of production. Before, we could adjust VA angle or replace lens A/B to solve it. But lens A/B contamination happened and happened again. It spent a lot of time, manpower and cost in recovery. So how to reduce lens replaced rate or engineer’s loading was necessary. According to experience, we found it cause from the lens A/B was damaged by laser. In the last analysis, the root cause was higher energy laser induce lens A/B contamination. We created original intensity control method to extend lens A/B lens lifetime; moreover, it could extend Laser chamber lifetime, either. This situation has been changed and proved it is workable after the program was implementing.
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