| Summary: | 碩士 === 國立交通大學 === 光電工程學系 === 100 === Oxide thin film transistors (TFTs) based on Indium-free materials are in high demand due to the price of In increase substantially. To solve those issues, zinc oxide (ZnO) based semiconductor materials are introduced and studied. Present study aims to develop the In-free metal oxide TFTs and discusses the characteristics of amorphous Zn-Sn-O (a-ZTO) TFTs, including thin film qualities, optical properties, electrical properties, stabilities, and etching resistance. Also, the comparisons of a-ZTO and amorphous In-Ga-Zn-O (a-IGZO) TFTs are presented. To realize the In-free TFTs, the a-ZTO TFTs with transparent conductive oxide Al-Zn-O (AZO) is used as source and drain electrodes.
The electrical results demonstrate that the mobility of a-ZTO TFT is higher than a-IGZO TFT, because a-ZTO has the lower effective mass and the higher carrier concentration. A-ZTO has the higher electronegativity in stronger metal oxide bonding than a-IGZO that results in better stability under a temperature bias stressing. A-ZTO has a factor of 8 higher in etching resistance compared to that of a-IGZO, thus, more easily forming high quality patterns definition in wet etching process. These results imply that a-ZTO TFT is promising to be high performance In-free TFTs.
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