Study of Dopant Profiling and Defect Isolation Using Secondary Electron Potential Contrast
博士 === 國立交通大學 === 光電工程學系 === 100 === This study investigates the defect isolation and dopant profiling using secondary electron potential contrast (SEPC). A novel primary electron energy adjustment method is proposed to remedy the imperfections in traditional SEPC method, which uses fixed primary el...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53330313102143526125 |