The Study of Nanomechanical and Cathodoluminescence Characteristics on the GaN Epitaxial Layers
博士 === 國立交通大學 === 機械工程學系 === 100 === Gallium nitride (GaN) is III-V wide-band-gap semiconductor and potential candidate for the application of photonic devices in blue/green light emitting diodes (LED), semiconductor lasers, and optical detectors. In terms of GaN film, the mismatch of lattice const...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/73304256408454426722 |