| Summary: | 碩士 === 國立交通大學 === 電控工程研究所 === 100 === As the development of data storage systems, micro optical filed measurement becomes more important. In conventional far-field optics, the micro spot size cannot be acquired easily. The resolution is limited by the pixel size. For near-field measurement, near-field scanning optical microscopes (NSOM) can be used to measure micro spot size with high resolution. However, the NSOM tip easily wears out in measurement. The setup of this system is complex and cost is high.
To improve these disadvantages, a microelectromachanical system (MEMS) optical field measurement system based on the scanning knife-edge and pinhole technique are proposed. In the D35-99B device, a knife-edge plate, a micro actuator, a photo detector and transimpedance circuit were integrated on a standard CMOS chip to scan across the optical distribution. Post process is used to suspend the microstructure in this chip. In D35-99B, the mechanical characteristics of the microstructures were simulated and measured. The measured frequency was lower than design value because the spring width was reduced during the RIE process. The transimpedance circuit and responsivity of knife edge photodiode were measured.
In D35-100A, the I-V curve of sidewall PN was presented. The measurement results of voltage signal from sidewall PN junction photodetector using integrate TIA, and the responsivity to the modulated light source was obtained. The measurement of optical spot was measured by using the CCD and the D35-100A device, and the spot diameter was calculated. The difference of the measured spot sizes between the CCD and the D35-100A device is less than 5 %.
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