Low consumptive current VCO of 8GHz
碩士 === 國立交通大學 === 電機學院電信學程 === 100 === This paper presents using for Phase Locked Loop with high frequency and low consumptive current VCO of 8GHz by TSMC 0.18um RF CMOS 1P6M process technology. The article mentioned the Barkhausen criterion、negative resistance criterion and the definition of phase...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98368958833665118432 |
| Summary: | 碩士 === 國立交通大學 === 電機學院電信學程 === 100 === This paper presents using for Phase Locked Loop with high frequency and low consumptive current VCO of 8GHz by TSMC 0.18um RF CMOS 1P6M process technology. The article mentioned the Barkhausen criterion、negative resistance criterion and the definition of phase noise. We also describe the advantage and disadvantage for the structure of the oscillator.
About the arrangement of layout, the RF signal was arranged in Metal6 layer. The device controller was arranged in Metal4 layer. Power line was lying down in Metal2 layer. The die area is 0.811x0.752 mm2.
The measured in center frequency was 8.090 GHz、Tuning range was 80MHz. Phase noise that shift 1MHz from center frequency is -116.8 dBc/Hz. The consumptive current was measured 3.36mA and consumptive power is 4.03mW. FOM is -188.9 dBc/Hz.
|
|---|