Role of EL2 on the electrical properties of InAs/GaAs quantum dots:the influence of illumination
碩士 === 國立交通大學 === 電子物理系所 === 100 === The electron emission properties of the EL2 defect state with (without) illumination in 2.2-ML(monolayer) InAs self-assembled quantum dots (QDs) containing an EL2 defect state is presented. Initially, the defect state is observed at the temperature dependence cap...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71229914267850421454 |