Optical joint density of states and effects of V-shaped structures in InGaN/GaN quantum wells
博士 === 國立交通大學 === 電子物理系所 === 100 === The wide range of energy gaps in group-III nitride-based materials allows for adjustment of the direct band gap energies from 0.7eV to 6.2eV by varying the compositions of In and Al contents, including all visible energy. Therefore, among the many commercial appl...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/33873660660038084490 |