Time-dependent Transport in Wide-Narrow-Wide Quantum Devices
碩士 === 國立交通大學 === 電子物理系所 === 100 === We consider a semiconductor quantum device that is transversely confined by a pair of split-gate forming a quasi-one-dimensional narrow channel and is biased by the source and drain electrodes. Both the finite-bias and the finite-temperature effects are explic...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42476883951493685448 |