| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 100 === The main topics of this thesis include electrical characterization and reliability investigation of metal to polymer hybrid bonding in three-dimensional integrated circuit. Hybrid bonding is one of the most important technologies in 3D-ICs because of dielectric polymer and metal can provide reinforcement of bonding strength and electrical interconnection simultaneously. Cu/Sn micro-bumps and BCB (benezocy-clobutene) were adopted and optimized to form metallization and dielectric material for hybrid bonding. As the result, a wafer-level three-dimensional integration scheme with Cu TSVs, based on face-to- face and Cu/Sn micro-bumps to BCB low temperature hybrid bonding, was demonstrated. The main process flow includes the sequence of Cu TSV formation, Cu/Sn and BCB development, hybrid bonding, wafer thinning and backside re-distribution metal layer. Kelvin structure and daisy chain design were fabricated for electrical characterization and stability evaluation. Reliability tests such as current stressing and humidity test were performed without deterioration, showing good sealing ability of BCB. The results of Kelvin structure for 10μm TSV are 49.3 mΩ for 5μm TSV and 12.6 mΩ, indicating excellent electrical characterization to allow the possibility of future mass production for 3D IC area.
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