Electrical Analysis and Investigation with Dynamic Negative and Positive Bias Stress of Hf1-xZrXO2/Metal Gate for P-MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 100 === The electrical characteristics and reliability of Hf1-xZrxO2 gate metal-oxide- semiconductor field effect transistors (MOSFETs) are investigated by analyzing experimental data from DC Id-Vg , and charge pumping measurements. We have found that higher mobility(μ),...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24674026365770770688 |