Hybrid Logic/Resistive-switching Poly-Si Thin
碩士 === 國立交通大學 === 電子研究所 === 100 === A hybrid device combined a resistive switching (RS) memory and a logic transistor is proposed in this thesis. The hafnium oxide (HfO2) is not only the high-κ gate dielectric of the transistor but also the resistive switching layer of the RRAM, and the nickel metal...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/64642943623743268165 |