The Effect of Thermal Annealing on IGZO TFT Properties Prepared by Atmospheric Pressure Plasma Jet

The Effect of Thermal Annealing on IGZO TFT Properties Prepared by Atmospheric Pressure Plasma Jet

碩士 === 國立交通大學 === 電子研究所 === 100 === In this paper, we have successfully developed a high performance thin film transistor (TFT) with indium gallium zinc oxide (IGZO) active layer deposited by atmospheric pressure plasma jet (APPJ). IGZO films show amorphous phase in XRD analysis. IGZO films have ove...

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Bibliographic Details
Main Author:	蔣偉韓
Other Authors:	張國明
Format:	Others
Language:	en_US
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/75658022715528815955

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