| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 100 === Recently, silicon nanowires (SiNWs) have been extensively studied and discussed in bio-sensor applications, and considered as one of the most promising candidate for sensor devices. We successfully fabricated silicon germanium nanowires (SiGeNWs), and confirmed that it has the same characteristics as SiNWs. In this thesis, the P-type SiGeNWs on the sidewall spacer be fabricated by stacked structure of different thickness and different silicon germanium concentration. Followed by oxidation, we change the oxygen/nitrogen ratio and oxidation time, then observed the Ge will condensation on the surface from SiGeNWs, so that the homogeneous SiGeNWs will become a non-homogeneous SiGeNWs. Finally, find the best concentration ratio of silicon germanium, the nitrogen/oxygen ratio, and the oxidation time, so that the surface of SiGeNWs with some we want to sense to produce the best bonding to improve sensitivity.
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