A Novel Six-Band k‧p Simulator for Hole Gate Tunneling Current in (001) and (110) Strained pMOSFETs with Polysilicon, FUSI, and Metal Gates
碩士 === 國立交通大學 === 電子研究所 === 100 === We present an enhanced effective mass approximation (eEMA) algorithm with which one can straightforwardly calculate hole gate tunneling current Ig in (001) and (110) uniaxial compressive strained p-MOSFETs. The differences among the conventional EMA, enhanced EMA,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86378864733786517206 |