A Novel Six-Band k‧p Simulator for Hole Gate Tunneling Current in (001) and (110) Strained pMOSFETs with Polysilicon, FUSI, and Metal Gates

• Main Authors: Pee, Lim-Shyang, 彭霖祥
• Other Authors: Chen, Ming-Jer
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/86378864733786517206

碩士 === 國立交通大學 === 電子研究所 === 100 === We present an enhanced effective mass approximation (eEMA) algorithm with which one can straightforwardly calculate hole gate tunneling current Ig in (001) and (110) uniaxial compressive strained p-MOSFETs. The differences among the conventional EMA, enhanced EMA, and sophisticated six-band k dot p results are demonstrated. The algorithm is systematically validated in the various ways: (i) self-consistent Cg-Vg curve reproduction; (ii) satisfactory fitting of existing strain altered Ig data for both polysilicon, fully-silicided (FUSI), and metal gates; (iii) good agreement with literature mobility enhancement values for stress up to -3 GPa; and (iv) reasonable fitting of available experimental Ig-Vg curves in (110) sidewall-surface p-FinFETs with and without the stress. Moreover, with the use of the algorithm we can examine the origins of the observed Ig difference between polysilicon gate p-MOSFETs (-1.83 GPa) and FUSI ones (-2.29 GPa).