small molecule vertical space-charge-limited-transistor

碩士 === 國立交通大學 === 物理研究所 === 100 === This is the first main point of the thesis. It is the first time to apply small molecule material to SCLT by the liquid state process. The small molecule, Spiro-OMeTAD, has high solubility and the HOMO(4.9eV) is match up with MoO3/Al. The Spiro-OMeTAD itself has a...

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Main Authors: Chao, Yen-Chu, 趙寅初
Other Authors: Meng, Hsin-Fei
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/23184911226173873235
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spelling ndltd-TW-100NCTU51980042016-03-28T04:20:38Z http://ndltd.ncl.edu.tw/handle/23184911226173873235 small molecule vertical space-charge-limited-transistor 有機小分子垂直式空間電荷限制電晶體 Chao, Yen-Chu 趙寅初 碩士 國立交通大學 物理研究所 100 This is the first main point of the thesis. It is the first time to apply small molecule material to SCLT by the liquid state process. The small molecule, Spiro-OMeTAD, has high solubility and the HOMO(4.9eV) is match up with MoO3/Al. The Spiro-OMeTAD itself has an advantage which is stable in atmospheric environment, so we successfully fabricate the small molecule SCLT which has the characteristic of transistor. The output current density is 0.07 mA/cm2, on/off current ratio as 70000. In addition to enhance the ability of hole injection, we add a PEDOT:PSS film above the Actice Layer. The output current density is indeed increase, 2.3 mA/cm2, on/off ratio is as 1500. This is the second main point of the thesis. Meng, Hsin-Fei Zan, Hsiao-Wen 孟心飛 冉曉雯 2012 學位論文 ; thesis 57 zh-TW
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language zh-TW
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description 碩士 === 國立交通大學 === 物理研究所 === 100 === This is the first main point of the thesis. It is the first time to apply small molecule material to SCLT by the liquid state process. The small molecule, Spiro-OMeTAD, has high solubility and the HOMO(4.9eV) is match up with MoO3/Al. The Spiro-OMeTAD itself has an advantage which is stable in atmospheric environment, so we successfully fabricate the small molecule SCLT which has the characteristic of transistor. The output current density is 0.07 mA/cm2, on/off current ratio as 70000. In addition to enhance the ability of hole injection, we add a PEDOT:PSS film above the Actice Layer. The output current density is indeed increase, 2.3 mA/cm2, on/off ratio is as 1500. This is the second main point of the thesis.
author2 Meng, Hsin-Fei
author_facet Meng, Hsin-Fei
Chao, Yen-Chu
趙寅初
author Chao, Yen-Chu
趙寅初
spellingShingle Chao, Yen-Chu
趙寅初
small molecule vertical space-charge-limited-transistor
author_sort Chao, Yen-Chu
title small molecule vertical space-charge-limited-transistor
title_short small molecule vertical space-charge-limited-transistor
title_full small molecule vertical space-charge-limited-transistor
title_fullStr small molecule vertical space-charge-limited-transistor
title_full_unstemmed small molecule vertical space-charge-limited-transistor
title_sort small molecule vertical space-charge-limited-transistor
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/23184911226173873235
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AT zhàoyínchū yǒujīxiǎofēnzichuízhíshìkōngjiāndiànhéxiànzhìdiànjīngtǐ
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