A Study of Electromigration Behaviors of GeSbTe Thin Films
碩士 === 國立交通大學 === 材料科學與工程學系 === 100 === Electromigration (EM) of pristine Ge2Sb2Te5 (GST), cerium (Ce)-doped GST and nitrogen (N)-doped GST layers applied to phase-change random access memory (PRAM) were investigated. Scanning electron microscopy (SEM) observed, regardless of the sample type, the fa...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79896757633652045166 |