Defect Passivation by Nanospheres Using H3PO4 and KOH Etching for UV LED
碩士 === 國立交通大學 === 光電系統研究所 === 100 === In this thesis, we compared defect passivation process by using H3PO4 and KOH etching solution. We observed GaN etching morphology.The H3PO4 prefer to etch screw type dislocation which is treated as non-radiative centers. On the other hand, KOH prefer to attack...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06276536655924809868 |