The Study of Nanoporous Silicon and Quantum dot/Nanoporous Silicon Hybrid Photodetector Device

• Main Authors: Cheng Hsiao Chung, 鄭孝忠
• Other Authors: Hsiao Vincent K.S
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/58345202569964397685

碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 100 === In recent decades, variety of the porous silicon material components was highly discussed, investigated, & intentional developed, such as photo detectors, light emitting diodes, and solar cells.As for this case study focus the surface of the silicon substrate on its electrochemical etching experiments, together utilizing the material properties of porous silicon to further improved the rate of light absorption, thereby increasing degrees of its responsively. However, the use of the current density adjustment, by etching of the different holes in its correspondences, further through the optical conductivity measurement methodology of its ongoing light reflection & measurement. In contrast, the strength characteristics of the porous silicon surface area on its volume ratio, achieved better performance in light absorption. Simultaneously, carrying out nanoparticle quantum dots, appropriately implementing correspondent holes, moreover, further highlighted the light response degrees in the optical absorption spectrums via the phenomenon of the Band-gap Alignment, as in further illustrated the porous silicon of hybrid quantum dot will significantly improve its responsiveness. In concluded the experiment & findings of this case study, I strongly believed the porous silicon of its future application by ways of porous silicon optical sensors developments will play a great assist enhancement in a new coming era.