Laser Annealing Technology For Electrical Characteristic Of Low Temperature Poly-Silicon Thin Film
碩士 === 國立暨南國際大學 === 光電科技碩士學位學程在職專班 === 100 === Low Temperature Poly-Silicon is the silicon based material. It’s composed by many silicon crystalline grains size around 0.3 to several million um. High Temperature Solid Phase Crystallization (HSPC) that required annealing temperature higher than 900°C...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51985687217116373840 |