Theoretical Study Of Ambipolar Air-Stable Organic Semiconductors

• Main Authors: Ching-Hsiu Li, 李青修
• Other Authors: Ming-Yu Kuo
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/21062355883277892407

碩士 === 國立暨南國際大學 === 應用化學系 === 100 === The P-type materials with organic field effect transistor have a better development in electronic property than N-type materials. In order to improve the drawback of single type OFET, we combine the P-type OFET with N-type OFET in complementary circuits. Developing the Ambipolar OFET which not only can be air-stable but also have good mobility is necessary. Density functional theory (DFT) calculations were performed to explore the influence of halogenation or conjugation on the reorganization energies (λ), adiabatic ionization potentials (IPs), adiabatic electron affinities (EAs), Highest occupied molecular orbital (HOMO), and lowest unoccupied molecular orbital (LUMO). A series of TIPS-TNP materials have predicted a better chance of high-performance ambipolar air-stable organic semiconductors (OSCs) according to calculated IP, EA and λ values. The results of Pyromellitimide and PTCDI derivatives are worse then TIPS-TNP series, need to be improved.