Fabrication and Measurement Characterization of Graphene Field-Effect Transistor

• Main Authors: Mu-ChengLi, 李沐宸
• Other Authors: Chi Gau
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/92875548180960348747

碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 100 === Since the discovery of graphene , graphene transistors immediately become one of the most popular studies in the field of electronics. Graphene has a very high electron mobility and many researchers hope to replace the silicon semiconductor materials. If the graphene transistor can be replace to the existing transistors , it can be improve the speed of response of the electronic components and graphene has excellent mechanical properties can be used in flexible device. It will replace to organic transistor one day. This study use chemical vapor deposition method to prepare graphene by nickel foil and the carbon source gas is alcohol. We use the grapheme as a channel material of MOS FET and discuss the characteristics of the graphene transistor. In th experiment, we produce different channel length , width and discuss the size effect. We use furnace tube to growth silicon dioxide as the dielectric layer and make transistors using back gate method. Using Raman optical system to observe the growth of graphene layers and e-field emission scanning electron microscope observe the surface morphology of the graphene. Then growth few-layer graphene by copper foil by the foundry. We use the same process to made a transistor and compared with nickel foil growth graphene. At the last we study used silicon nanowire to made a graphene nano ribbon transistors which can be positioned