The effect of Si or Mg doping on GaN Solar Cells with Mn-related Intermediate Band
碩士 === 國立成功大學 === 光電科學與工程學系 === 100 === The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells by enhancing its photo-current via the two step absorption of sub-band gap photons, without reducing its output vo...
Main Authors: | Chong-MingHuang, 黃崇銘 |
---|---|
Other Authors: | Jinn-Kong Sheu |
Format: | Others |
Language: | zh-TW |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/82496465052354454619 |
Similar Items
-
Investigation of Mn-doped GaN Intermediate Band Solar Cells
by: Chia-HuiLee, et al.
Published: (2012) -
Characterization of Mn-doped GaN-based Intermediate Band Solar Cell
by: Po-ChengChen, et al.
Published: (2017) -
Photovoltaic Characteristics Studying of Mn-doped GaN Intermediate Band Solar Cells
by: Zong-ShengZeng, et al.
Published: (2014) -
Photovoltaic characteristics of Si-doped GaN: the potential for intermediate band solar cells
by: Jen-hsiung Liao, et al.
Published: (2013) -
GaN-based Solar Devices featuring Mn-related Intermediate Band and Surface Plasmon Structure
by: Kuan-TingChen, et al.
Published: (2017)