| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 100 === The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells by enhancing its photo-current via the two step absorption of sub-band gap photons, without reducing its output voltage. The thesis is divided into two parts, one is the study of Si or Mg doping on GaN Solar Cells with Mn-related Intermediate Band, and another one is the study of GaN Schottky-barrier photodetectors with GaN: Mn cap layer. In the study of GaN: Mn co-doping Mg intermediate band solar cell, two types of structure: solar cell with p-AlGaN blocking layer, solar cell with p-GaN blocking layer. In order to realize intermediate band mechanism, we design another structure GaN: Mn co-doping Si of active layer. Compared with Mn-doped GaN-based solar cell, the responsivity spectrum of GaN: Mn co-doping Mg or Si based solar cell had different performance. Mn-doped GaN-based solar cell and GaN: Mn co-doping Mg or Si based solar cell exhibits three-step-responsivity characteristics. Expect that the impurity band of GaN: Mn co-doping Mg or Si could contribute more photocurrent by sunlight. The experiment result and the theoretically mechanism were studied in this thesis.
For the second part, we focus on the u-GaN with different flow rate of GaN: Mn cap layers to fabricate Schottky diode photodetectors. In the text, we selected Ni/Au film as Schottky contact to be evaporated on the structure. After measurement, Schottky barrier height、dark current、photo current and responsivity are determined separately and compared in the different structures.
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