Investigation of Electrical Characteristics in High Performance MOSFET Utilizing Mobility Enhancement Technology
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 100 === Because of the continuous MOSFET scaling, carrier mobility becomes the key for maintaining Moore’s Law and booting CMOS performance. In order to obtain high performance MOSFET, mobility enhancement technologies are introduced and applied into state-of-the...
Main Authors: | Po-ChinHuang, 黃博勤 |
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Other Authors: | Shoou-Jinn Chang |
Format: | Others |
Language: | en_US |
Published: |
2012
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Online Access: | http://ndltd.ncl.edu.tw/handle/22616845797856017527 |
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