Synchrotron Radiation Photoemission Spectroscopy Study of Epitaxial Boron Nitride Surface

• Main Authors: Yu‐PengChen, 陳育朋
• Other Authors: Chung-Lin Wu
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/83804455945431161450

碩士 === 國立成功大學 === 物理學系碩博士班 === 100 === Hexagonal BN has been grown on boron-doped Si (111) substrate by using N2 plasma nitridation at high temperature. The electronic structure of h-BN was characterized by in situ synchrotron radiation photoelectron spectroscopy (SR-PES). The core-level spectroscopy indicated the bonding structures of h-BN grown on β-Si3N4/Si substrate. And, the valence-band spectroscopy revealed the band structures and band offset values of our h-BN/β-Si3N4/Si tri-layer hetero-structure.