Power-Efficient High-Voltage CMOS Gate Drivers and DC-Isolating Circuits for Power Electronics

• Main Authors: Kuo Ko, 柯虢
• Other Authors: Hong-chin Lin
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/09859433810687285042

碩士 === 國立中興大學 === 電機工程學系所 === 100 === In recent years, because integrated circuit technology becomes more and more sophisticated, VLSI process technologies drive more and more diversified applications. The high-voltage integrated circuit process technology is gradually applied to high power electronic equipments, which become small-size, low-power and high power-efficient, In short, the high-voltage electronic equipment tends to be integrated into a chip. The gate drivers have been applied to various circuits, such as full-bridge inverters, push-pull converters, boost or buck converters, etc. In the high voltage equipments, the gate drivers are required to provide high voltage outputs with good and stable output currents to drive the power transistors. In the mean time, the drivers need to have resonable speed and maintain low power with high power efficiency. In this thesis, power-efficient high-voltage CMOS gate drivers were designed and fabricated using the TSMC 0.25μm high-voltage CMOS process on area of 0.3632mm2. If the input signal is from 0V to 3V with supply voltage of 15V, the output can drive the maximum capacitive load of 3600pF at 20KHz. This gate driver can be used in automotive electronics, inverters, and audio electronics for output voltage from 12V to 15V. Signal isolation circuits, as known as DC isolation circuits, similar to the optical couplers and pulse transformers are used for electrical isolation of the circuit, for example, inverters, driver circuits or switching circuits, etc. The purpose is to isolate the control circuit and the application circuit due to different DC potentials. It can protect the circuits and avoid disturbance owing to different potentials. In this thesis, differential DC isolation circuits were designed using the TSMC 0.25μm high-voltage CMOS process. The high-voltage CMOS devices are acted as the isolation components. The DC isolation circuits can isolate over 30V at supply voltages of 3V or 5V with chip core area of 0.0454 mm2. The minimum power consumption is 0.74mW at the switching frequency of 20KHz.